Referenced Items are not available for this document.
AlGaN/GaN MISHEMTs With High- 
Gate Dielectric
AlGaN/GaN MISHEMTs With High-
A high-κ LaLuO3 (LLO) thin film is successfully incorporated into AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) as the gate dielectric. The LLO-AlGaN/GaN MISHEMTs fabricated with a planar process exhibit a high ION/IOFF of 109, a maximum drain current of 820 mA/mm at VGS = 3 V, a peak transconductance (Gm) of ~ 192 mS/mm, and a steep subthreshold slope (SS) of ~ 73 mV/dec.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
7
)
Date of Publication: July 2012
- Page(s):
- 979 - 981
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12817623
- Digital Object Identifier :
- 10.1109/LED.2012.2195291
- Product Type:
- Journals & Magazines
- Date of Publication :
- 24 May 2012
- Date of Current Version :
- 22 June 2012
- Issue Date :
- July 2012
- Sponsored by :
- IEEE Electron Devices Society
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