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A 9 mW, Q-Band Direct-Conversion I/Q Modulator in SiGe BiCMOS Process

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4 Author(s)
Gupta, A.K. ; Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA ; Joohwa Kim ; Asbeck, P. ; Buckwalter, J.F.

This letter demonstrates a low-power, Q-band, direct-conversion I/Q modulator. The modulator consumes 9 mW power from a 1 V supply and delivers - 9.3 dBm RF power at 39 GHz. The modulator exhibits an EVM of 5.3% for 16QAM at 3 Msymbols/s. The circuit is fabricated in 0.12 μm SiGe BiCMOS process and occupies an area of 1.5 mm2.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:22 ,  Issue: 6 )