By Topic

Characterization of strain fields in graphene films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Dewanto, R. ; Newcastle Univ., Newcastle upon Tyne, UK ; Dale, C. ; Zhongxu Hu ; Keegan, N.
more authors

This paper reports on the Raman shifts corresponding to strain induced in graphene films. A direct correlation is demonstrated between the shifts in the D, G and 2D peaks of graphene compared to the characteristic 521cm-1 peak of the underlying silicon substrate. The approach is shown to be suitable for characterizing the graphene Raman spectrum under load conditions.

Published in:

Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on

Date of Conference:

5-8 March 2012