By Topic

Proposal and design of III-V/Si hybrid lasers with current injection across conductive wafer-bonded heterointerfaces

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tanabe, K. ; Inst. for Nano Quantum Inf. Electron. & Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan ; Iwamoto, Satoshi ; Arakawa, Yasuhiko

We propose three types of III-V/Si hybrid laser structures utilizing conductive wafer-bonded III-V/Si heterointerfaces. Our structures enable vertical current injection across the bonded heterinterfaces and therefore have advantages of lateral current confinement leading to higher quantum efficiencies and simpler fabrication without mesa etch or ion implantation in contrast to the previous lateral-current-injection III-V/Si hybrid lasers using SiO2-mediated wafer bonding. As a preliminary demonstration, we have fabricated InAs/GaAs quantum dot lasers on Si substrates with current injection across direct-bonded GaAs/Si Ohmic heterointerfaces.

Published in:

Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011

Date of Conference:

Aug. 28 2011-Sept. 1 2011