Cart (Loading....) | Create Account
Close category search window

Base transit time of a heterojunction bipolar transistor (HBT) with Gaussian doped base under high-level of injection

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Islam, S.M.M. ; Dept. of Electr. & Electron. Eng., United Int. Univ., Dhaka, Bangladesh ; Chowdhury, M.I.B. ; Arafat, Y. ; Khan, M.Z.R.

Base transit time for an npn SiGe HBT has been analysed assuming Gaussian doped base considering doping dependent mobility. Band-gap narrowing (BGN) effects due to heavy doping, due to presence of Germanium and due to change in the density of states (DOS) have also been considered. The presence of Ge has been incorporated by using a different saturation velocity for the SiGe alloy. A generalized profile for Ge mole fraction distribution is used, where Ge profile variation has been illustrated by varying a single parameter for box, trapezoidal and triangular forms. Base transit time of SiGe HBT has been calculated for these three Ge profiles under high level of injection.

Published in:

Devices, Circuits and Systems (ICDCS), 2012 International Conference on

Date of Conference:

15-16 March 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.