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Analysis and study of different parameters affecting the I–V characteristics of tunnel-FET transistor

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4 Author(s)
Gupta, P.S. ; Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Kolkata, India ; Rahaman, H. ; Kanungo, S. ; Dasgupta, P.S.

This paper presents a thorough simulation study on the various drive current improvement schemes on Double Gated Tunneling Field Effect Transistor. It also presents a band-gap engineering technique in order to increase the on-state current of the device. Qualitative analysis has been provided explaining the effect of these techniques on the device characteristics.

Published in:

Devices, Circuits and Systems (ICDCS), 2012 International Conference on

Date of Conference:

15-16 March 2012