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Three-dimensional (3-D) integration with through-silicon vias (TSVs) has emerged as an effective solution to overcome the wiring limit imposed on device density and performance. However, thermal stresses induced in the TSV structures can affect the device performance by degrading carrier mobility and raise serious reliability concerns. In this paper, the effect of thermal stresses in TSV structures on carrier mobility and keep-out zone (KOZ) was investigated by focusing on the characteristics of the stresses near the surface where the electronic devices are located. The near-surface stresses were characterized by finite element analysis, and the stress effect on carrier mobility was evaluated by considering the piezoresistivity effect near the Si surface. In this paper, the elastic anisotropy of Si was taken into account to evaluate the effect on carrier mobility for both n- and p-channel MOSFET devices aligned along the  and  directions. The results showed a significant stress effect on carrier mobility, particularly for n-type Si with  device alignment and p-type Si with  device alignment. Based on these results, the dimension of the KOZ was estimated based on a criterion of 5% change in the carrier mobility. Finally, the effects due to stress interactions in a TSV array and plasticity in Cu vias on the KOZ were investigated. The effect of stress interaction was found to depend on the ratio of the pitch to diameter of the TSV array. When this ratio is less than 5, the stress interaction can increase the size of the KOZ. In contrast, the via material plasticity was found to be useful in reducing the stress level and hence the size of the KOZ.