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A 13dBm 60GHz-band injection locked PA with 36% PAE in 65nm CMOS

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3 Author(s)
Tormanen, M. ; Electr. & Inf. Technol., Lund Univ., Lund, Sweden ; Lindstrand, J. ; Sjoland, H.

A 60GHz fully integrated injection locked power amplifier (PA) with single-ended input and output signals is demonstrated. The PA core is composed of an NMOS cross-coupled pair together with NMOS current injecting transistors. On-chip transformers are used as baluns for balanced signal conversion. Using a 1.2V supply the PA achieves an output power (Pout) of 13dBm and a power added efficiency (PAE) of 36% at 58GHz. It is implemented in a standard 65nm LP CMOS process and occupies a chip area of 0.54×0.29 mm2 including pads.

Published in:

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Date of Conference:

5-8 Dec. 2011

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