A 13dBm 60GHz-band injection locked PA with 36% PAE in 65nm CMOS

A 60GHz fully integrated injection locked power amplifier (PA) with single-ended input and output signals is demonstrated. The PA core is composed of an NMOS cross-coupled pair together with NMOS current injecting transistors. On-chip transformers are used as baluns for balanced signal conversion. Using a 1.2V supply the PA achieves an output power (Pout) of 13dBm and a power added efficiency (PAE) of 36% at 58GHz. It is implemented in a standard 65nm LP CMOS process and occupies a chip area of 0.54×0.29 mm
²
including pads.