By Topic

A 27 MHz temperature compensated MEMS oscillator with sub-ppm instability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tabrizian, R. ; Georgia Inst. of Technol., Atlanta, GA, USA ; Pardo, M. ; Ayazi, F.

This paper reports on the design, implementation and characterization of a low phase-noise 27 MHz MEMS oscillator with sub-ppm temperature instability based on a high-Q composite bulk acoustic wave (BAW) resonator. An array of silicon dioxide (SiO2) pillars has been uniformly embedded in the body of a piezoelectrically transduced silicon resonator to compensate its negative temperature coefficient of frequency (TCF). Using this technique, an overall frequency drift of 83 ppm is achieved for the resonator over the temperature range of -20°C to 100°C while resonator Q remains greater than 7,500 in atmospheric pressure. An electronically compensated oscillator using this resonator exhibits sub-ppm temperature instability with a consistent phase noise (PN) behavior over the entire temperature range and a value of -101 dBc/Hz at 1 kHz offset-frequency. Long-term stability measurement has been carried out for both temperature-compensated resonator and oscillator in an environmental chamber to study their stability over time.

Published in:

Micro Electro Mechanical Systems (MEMS), 2012 IEEE 25th International Conference on

Date of Conference:

Jan. 29 2012-Feb. 2 2012