Zinc diffusion process for GaAs/sub 0.6/P/sub 0.4/ red light emitting diode fabrication in an undergraduate laboratory

The formation of p/sup +/-n junctions by zinc diffusion into n-type GaAs/sub 0.6/P/sub 0.4/ wafers is described. Processes developed in this work allow experience with chemical vapor deposition and the fabrication of red LEDs in an undergraduate laboratory with minimal student exposure to hazardous chemicals. Electrical and optical characteristics of the resulting LEDs are presented.