By Topic

Effect of shadowing ion energy flux and neutral flux and isotropic neutral flux on plasma etching profiles

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Wang, Chungdar Daniel ; Dept. of Electr. Eng., Washington Univ., St. Louis, MO, USA ; Abraham-Shrauner, Barbara

Summary form only given. A model for the simulation of etch rates in ion-assisted and energetic neutral plasma etching on semiconductor wafers is developed. Explicit analytical expressions for evolving two dimensional etched surfaces are solved by the method of characteristics

Published in:

University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial

Date of Conference:

20-23 Jul 1997