Referenced Items are not available for this document.
This paper addresses the integrated circuit industry needs for non-isothermal simulation in device reliability analysis, initial input factor sensitivity analysis and their software implementation. The key reliability issues are the hot-electron induced oxide damages which result in the device degradation and electro-static discharge (ESD) damages which may cause failure in circuit operation. The main purpose of this work is to provide a design aid tool to improve device reliability and performance
Published in:
University/Government/Industry Microelectronics Symposium, 1997., Proceedings of the Twelfth Biennial
Date of Conference: 20-23 Jul 1997
- Page(s):
- 83 - 87
- Meeting Date :
- 20 Jul 1997-23 Jul 1997
- ISSN :
- 0749-6877
- Print ISBN:
- 0-7803-3790-5
- INSPEC Accession Number:
- 5766789
- Conference Location :
- Rochester, NY
- Digital Object Identifier :
- 10.1109/UGIM.1997.616689
- Product Type:
- Conference Publications
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