Referenced Items are not available for this document.
The fabrication and performance of planar InAs/AlSb high-electron-mobility transistors (HEMTs) based on ion-implantation isolation technology are reported. Ar atoms have been implanted at an energy of 100 keV and with a dose of 2 ×1015 cm-2 in order to induce device isolation. The InAs/AlSb HEMT exhibited a maximum drain current of 900 mA/mm, a peak transconductance of 1180 mS/mm, and an fT/fmax ratio of 210 GHz/180 GHz at a low drain bias of 0.3 V. The combination of excellent stability against oxidation with the high device isolation demonstrated by the implantation technique can dramatically improve the suitability of InAs/AlSb HEMTs for high-frequency and ultralow-power MMIC applications.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
4
)
Date of Publication: April 2012
- Page(s):
- 510 - 512
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12617694
- Digital Object Identifier :
- 10.1109/LED.2012.2185480
- Date of Publication :
- 02 March 2012
- Date of Current Version :
- 22 March 2012
- Issue Date :
- April 2012
- Sponsored by :
- IEEE Electron Devices Society
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