By Topic

RF Planar Inductor Electrical Performances on n-Type Porous 4H Silicon Carbide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Gautier, G. ; Univ. de Tours, Tours, France ; Capelle, M. ; Billoue, J. ; Cayrel, F.
more authors

For the first time, inductors were integrated on porous silicon carbide to study the effect of this substrate on radio-frequency (RF) performances. n-Type heavily doped 4H-SiC substrates were anodized in an HF-based electrolyte to produce 6- and 15-μm-thick porous layers. An improvement of the quality factor was demonstrated on porous SiC with regard to SiC bulk. This promising result shows the decrease of substrate losses at the high frequencies with the porous SiC substrate. Thus, porous SiC could have an interest for the integration of RF power devices.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 4 )