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A 245 GHz CB LNA and SHM mixer in SiGe technology

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4 Author(s)
Yanfei Mao ; IHP, Frankfurt (Oder), Germany ; Schmalz, K. ; Borngraber, J. ; Scheytt, J.C.

The paper presents a four stage 245 GHz LNA in an ft/fmax=280/425 GHz SiGe technology and a 4th sub harmonic 245 GHz transconductance mixer in an ft/fmax=250/300 GHz SiGe technology. The LNA takes advantage of common base (CB) topology for each stage and has 12 dB gain at 245 GHz, while exhibiting a 3 dB bandwidth of 26 GHz. It has a supply voltage of 2V and power dissipation of 28 mW. The transconductance mixer has -7 dB conversion gain at 245 GHz with an LO power of 8 dBm at 61 GHz. The mixer draws 9.8 mA at 3V. Simulation results of the receiver comprising the CB LNA and SHM mixer are given.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Date of Conference:

16-18 Jan. 2012