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Super-High-Frequency SAW Resonators on AlN/Diamond

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6 Author(s)
Rodriguez-Madrid, J.G. ; Dept. de Ing. Electron., Univ. Politec. de Madrid, Madrid, Spain ; Iriarte, G.F. ; Pedros, J. ; Williams, O.A.
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This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10-14 GHz range with up to 36 dB out-of-band rejection.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 4 )