Referenced Items are not available for this document.
Gallium phosphide (GaP), with its wide band gap of 2.26 eV, is a good candidate for the top junction solar cell in a multijunction solar cell system. Here, we design, fabricate, characterize, and analyze GaP solar cells. Liquid phase epitaxy is used to grow the semiconductor layers. Four generations of GaP solar cells are developed and fabricated with each solar cell structure being designed and improved based on the first principles analyses of the predecessor solar cells. Quantum efficiency and current-voltage measurements are used to analyze the solar cell performance and to develop predictive models. We create a GaP solar cell with an efficiency of 2.42% under AM 1.5G one sun illumination.
Published in:
Photovoltaics, IEEE Journal of
(Volume:2
,
Issue:
2
)
Date of Publication: April 2012
- Page(s):
- 214 - 220
- ISSN :
- 2156-3381
- INSPEC Accession Number:
- 12615270
- Digital Object Identifier :
- 10.1109/JPHOTOV.2011.2182180
- Product Type:
- Journals & Magazines
- Date of Publication :
- 23 February 2012
- Date of Current Version :
- 19 March 2012
- Issue Date :
- April 2012
- Sponsored by :
- IEEE Electron Devices Society
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