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We report an ultrashallow metallic source/drain (S/D) contact scheme for fully self-aligned III-V NMOS with specific contact resistivity and sheet resistance which, for the first time, demonstrate performance metrics that may be compatible with the ITRS Rext requirements for 12-nm technology generation device pitch. The record specific contact resistivity between the contact pad and metallic S/D of ρc = 2.7 ·10-9 Ω·cm2 has been demonstrated for 10 nm undoped InAs channels by forming an ultrashallow crystalline ternary NiInAs phase with Rsh = 97 Ω/sq for a junction depth of 7 nm. The junction depth of the S/D scheme is highly controllable and atomically abrupt.
Date of Publication: April 2012