By Topic

Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jae-Hoon Lee ; GaN Power Research Group, R&D Institute, Samsung LED Co., Ltd, Suwon, Korea ; Jae-Hyun Jeong ; Jung-Hee Lee

AlGaN/GaN Schottky barrier diodes (SBDs) with and without the in situ silicon carbon nitride (SiCN) cap layer were investigated. The fabricated SBD with the SiCN cap layer exhibited improved electrical characteristics, such as the forward turn-on voltage of about 0.7 V, the forward current of 4.1 A at 1.5 V, and the reverse breakdown voltage of 630 V, as compared with the corresponding values of 0.8 V, 3.8 A, and 580 V for the reference SBD without the SiCN cap layer. This improvement in the device performance of the SiCN-SBD is because the in situ SiCN cap layer not only lowers the barrier height but also effectively passivates the surface of the device with better surface morphology.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 4 )