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A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

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7 Author(s)
Yang Lu ; Inst. of Microelectron., Peking Univ., Beijing, China ; Bin Gao ; Yihan Fu ; Bing Chen
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A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random access memory (RRAM). In this model, the analytical expressions of the RESET time of RRAM devices and the correlated resistance in high-resistance states are presented and experimentally verified. Based on the extracted physical-based model parameters from measured data, the resistive switching characteristics of oxide-based RRAM devices can be evaluated.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 3 )