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Monolithic RC-snubber for power electronic applications

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6 Author(s)
vom Dorp, J. ; Electron Devices, Univ. Erlangen-Nuremberg, Erlangen, Germany ; Berberich, S.E. ; Erlbacher, T. ; Bauer, A.J.
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In this work, we present a monolithic RC-snubber for power electronic applications that outperforms state of the art RC-snubbers in terms of characteristic electrical parameters. The principle device structure as well as the process technology is presented. The outstanding properties of the device are a high capacitance per area (1.5 nF/mm2), a low temperature coefficient of the capacitance value (85 ppm/°C) and a low leakage current (<;1 nA) for voltages up to 250 V. Characteristic electrical parameters of the single device and in a typical application are shown. In comparison to a SMD snubber, the monolithic RC-snubber shows a significant reduction of overvoltage during switching and enhanced electromagnetic noise suppression.

Published in:

Power Electronics and Drive Systems (PEDS), 2011 IEEE Ninth International Conference on

Date of Conference:

5-8 Dec. 2011

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