By Topic

Wide center-tape balun for 60 GHz silicon RF ICs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Fanyi Meng ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore ; Kiat Seng Yeo ; Shanshan Xu ; Kaixue Ma
more authors

A monolithic transformer balun has been designed for 60 GHz applications. The balun is implemented based on GLOBALFOUNDRIES 65 nm CMOS process. Simulated amplitude and phase imbalance less than 0.1 dB and 0.34 degrees respectively over the 55-66 GHz frequency band are achieved. Insertion loss is as low as 1.22 dB at 60 GHz. The designed device has advantage of small size, low loss and excellence in output balance.

Published in:

SoC Design Conference (ISOCC), 2011 International

Date of Conference:

17-18 Nov. 2011