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The effects of different silicon carbide — Silicon dioxide interface passivations on transition region mobility and transport

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5 Author(s)
Salemi, S. ; Dept. of Reliability Eng., Univ. of Maryland, College Park, MD, USA ; Akturk, A. ; Potbhare, S. ; Lelis, A.
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This paper investigates the impact of different passivations on (0001)4H-SiC/SiO2 interface mobility. The velocity and mobility versus external field are calculated for 4H-SiC/SiO2 before and after hydrogen, nitrogen, phosphorous, and arsenic passivations. The calculations are performed by using a newly developed Monte Carlo simulator that uses the electron density of states (DOS) calculated by density functional theory (DFT). The calculations show that passivation improves the mobility of the interface. In the case of nitrogen and phosphorous passivations, the mobility increases by more than two and three times of that of a non-passivated structure, respectively.

Published in:

Semiconductor Device Research Symposium (ISDRS), 2011 International

Date of Conference:

7-9 Dec. 2011