Referenced Items are not available for this document.
Silicon carbide (SiC) material properties make it well suited for pulsed power applications. SiC has a higher electric field breakdown, allowing for thinner, more compact high voltage devices. Silicon carbide also has a much shorter minority carrier lifetime which equates to much faster recovery time; it also has good thermal conductivity equating to minimum cooling requirements for a pulsed system and a high Young's modulus enabling SiC to withstand high current and voltage pulse stresses [1].
Published in:
Semiconductor Device Research Symposium (ISDRS), 2011 International
Date of Conference: 7-9 Dec. 2011
- Page(s):
- 1 - 2
- Print ISBN:
- 978-1-4577-1755-0
- INSPEC Accession Number:
- 12489241
- Conference Location :
- College Park, MD
- Digital Object Identifier :
- 10.1109/ISDRS.2011.6135141
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