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Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

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11 Author(s)
Seungjae Jung ; Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. (GIST), Gwangju, South Korea ; Siddik, M. ; Wootae Lee ; Jubong Park
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We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). “Thermoelectric heating effect” from GST/Ti junction and “thermal barrier effect” from the heat confinement by GST and PCMO thermal insulators successfully improved switching speed while “large effective Schottky barrier (SB) height (Φeff)” provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011