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Graphene technology with inverted-T gate and RF passives on 200 mm platform

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8 Author(s)
Shu-Jen Han ; IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA ; Valdes-Garcia, Alberto ; Bol, A.A. ; Franklin, A.D.
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Wafer-scale graphene devices processed entirely in a standard 200 mm silicon fab are demonstrated for the first time. New embedded gate structures enable full saturation of the drain current in graphene FETs with sub-μm channels, resulting in high intrinsic voltage gain. In addition, passive devices were monolithically integrated with graphene transistors to form the first GHz-range graphene IC using large-scale CVD graphene. The demonstration of high performance graphene FETs and IC fabricated using a 200 mm platform is a major step in transitioning this promising material from a scientific curiosity into a real technology.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011