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High-frequency performance of graphene field effect transistors with saturating IV-characteristics

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7 Author(s)
Meric, I. ; Dept. of Electr. Eng., Columbia Univ., New York, NY, USA ; Dean, C.R. ; Shu-Jen Han ; Lei Wang
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High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined.

Published in:

Electron Devices Meeting (IEDM), 2011 IEEE International

Date of Conference:

5-7 Dec. 2011

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