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New semiconductor materials and devices for terahertz imaging and sensing

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10 Author(s)
Otsuji, T. ; RIEC: Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan ; Watanabe, T. ; Akagawa, K. ; Tanimoto, Y.
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Recent advances in materials and device structures for terahertz imaging and sensing technology are reviewed. The fundamental physical principle for terahertz imaging/sensing is focused on the nonlinear dynamics of plasmons in two-dimensional semiconductors including quantum wells in III-V based heterostructures as well as graphene.

Published in:

Sensors, 2011 IEEE

Date of Conference:

28-31 Oct. 2011