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Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs

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9 Author(s)
Nuo Xu ; Electr. Eng. & Comput. Sci. Dept., Univ. of California, Berkeley, CA, USA ; Ho, B. ; Andrieu, F. ; Smith, L.
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The impact of body-thickness scaling on strain-induced carrier-mobility enhancement in thin-body CMOSFETs with high-k/metal gate stacks, based on quantum-mechanical simulations calibrated with measured data, is presented to provide insight into device performance enhancement trends for future technology nodes.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 3 )