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The impact of discrete doping in junctionless gate all-around n-type silicon nanowire transistors is studied using 3-D nonequilibrium Green's functions simulations. The studied devices have a 20 nm long gate and cross sections of 4.2 × 4.2 and 6.2 × 6.2 nm2. The average doping concentration is 1020 cm-3. The dopant distributions are randomly generated and modeled in a fully atomistic way. Phonon scattering, elastic and inelastic, is also included in the simulations. We show that junctionless nanowire transistors have a much higher subthreshold variability than their inversion mode counterparts for the equivalent geometry and doping level.