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Gated diamond field emitter array with ultra low operating voltage and high emission current

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7 Author(s)
Wisitsora-at, A. ; Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA ; Kang, W.P. ; Davidson, J.L. ; Howell, M.
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Gated Diamond Field Emitter Array with ultra low operating voltage and high emission current has been reported for the first time. Two types of built-in gated diamond field emitter have been successfully fabricated: a volcano gated structure by self-align technique and a cap gated structure by electrostatic bonding. Diamond was deposited by PECVD on a silicon inverted pyramidal mold. The mold was then etched away. To construct the gated volcano emitter, a 2 /spl mu/m-thick SiO and a 1 /spl mu/m-thick Al were deposited on the diamond tips. Self-align technique was then performed to obtain the gated volcano structure with SiO as a gate dielectric and Al as a gate. To construct the cap gated emitter, an anode comprised of heavily doped silicon was electrostatically bonded to the substrate with a SiO/sub 2/ dielectric spacer between, forming an emitter-anode spacing of 2 /spl mu/m.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997