By Topic

High speed and high power AlGaN/GaN MODFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Y. -F. Wu ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; B. P. Keller ; S. Keller ; N. X. Nguyen
more authors

Device optimization of AlGaN/GaN MODFETs has resulted in a record high f/sub T/ of 50 GHz for a GaN based FET and a record high CW power density of 2.54/spl sim/2.84 W/mm in X band for a solid-state FET.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997