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High gain 4H-SiC static induction transistors using novel sub-micron airbridging

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7 Author(s)
Siergiej, R.R. ; Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA ; Morse, A.W. ; Esker, P.M. ; Smith, T.J.
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For the first time, high gain 4H-SiC static induction transistors (SITs) have been fabricated using a sub-micron source airbridging technique. These devices exhibit record 15 dB small signal gain at 3 GHz. This represents the highest gain yet reported for a SIT structure in any semiconductor.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997

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