Referenced Items are not available for this document.
For the first time, high gain 4H-SiC static induction transistors (SITs) have been fabricated using a sub-micron source airbridging technique. These devices exhibit record 15 dB small signal gain at 3 GHz. This represents the highest gain yet reported for a SIT structure in any semiconductor.
Published in:
Device Research Conference Digest, 1997. 5th
Date of Conference: 23-25 June 1997
- Page(s):
- 136 - 137
- Meeting Date :
- 23 Jun 1997-25 Jun 1997
- Print ISBN:
- 0-7803-3911-8
- INSPEC Accession Number:
- 5723926
- Conference Location :
- Fort Collins, CO, USA
- Digital Object Identifier :
- 10.1109/DRC.1997.612502
- Product Type:
- Conference Publications
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