Referenced Items are not available for this document.
In this work, we describe the operation of a novel, three-terminal, laterally patterned NDC device fabricated in a high-mobility strained Si quantum well. We call this device a hot-electron phonon-emission field-effect transistor (HEPEFET), because the NDC is caused by phonon emission of energetic electrons injected into a constricted geometry. We describe the characteristics of the HEPEFET, and point out some of the features that make it potentially attractive for future high-density circuit applications.
Published in:
Device Research Conference Digest, 1997. 5th
Date of Conference: 23-25 June 1997
- Page(s):
- 86 - 87
- Meeting Date :
- 23 Jun 1997-25 Jun 1997
- Print ISBN:
- 0-7803-3911-8
- INSPEC Accession Number:
- 5730822
- Conference Location :
- Fort Collins, CO, USA
- Digital Object Identifier :
- 10.1109/DRC.1997.612484
- Product Type:
- Conference Publications
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