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In this work, we describe the operation of a novel, three-terminal, laterally patterned NDC device fabricated in a high-mobility strained Si quantum well. We call this device a hot-electron phonon-emission field-effect transistor (HEPEFET), because the NDC is caused by phonon emission of energetic electrons injected into a constricted geometry. We describe the characteristics of the HEPEFET, and point out some of the features that make it potentially attractive for future high-density circuit applications.
Device Research Conference Digest, 1997. 5th
Date of Conference: 23-25 June 1997