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InP based HFET structure grown and processed at very low temperatures below 300/spl deg/C

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2 Author(s)
Henle, B. ; Dept. of Electron. Devices & Circuits, Ulm Univ., Germany ; Kohn, E.

We present a new method which allows overgrowth of a fully processed InP optoelectronic component at an extremely low temperature of less than 300/spl deg/C. This includes all processing steps needed for FET fabrication. InP grown at low temperature forms a P/sub In/ anti-site defect, with the first excited state located 120 meV above the conduction band edge. This material is automatically n-type and auto-doped and is therefore a candidate for a active layers such as the FET channel material. The concentration of this P/sub In/ anti-site defects is connected with the growth temperature and V/III flux ratio. Therefore a strong influence of growth temperature on sheet carrier concentration and saturation current is found.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997

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