Cart (Loading....) | Create Account
Close category search window

InP based HFET structure grown and processed at very low temperatures below 300/spl deg/C

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Henle, B. ; Dept. of Electron. Devices & Circuits, Ulm Univ., Germany ; Kohn, E.

We present a new method which allows overgrowth of a fully processed InP optoelectronic component at an extremely low temperature of less than 300/spl deg/C. This includes all processing steps needed for FET fabrication. InP grown at low temperature forms a P/sub In/ anti-site defect, with the first excited state located 120 meV above the conduction band edge. This material is automatically n-type and auto-doped and is therefore a candidate for a active layers such as the FET channel material. The concentration of this P/sub In/ anti-site defects is connected with the growth temperature and V/III flux ratio. Therefore a strong influence of growth temperature on sheet carrier concentration and saturation current is found.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.