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900 V DMOS and 1100 V UMOS 4H-SiC power FETs

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5 Author(s)
Casady, J.B. ; Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA ; Agarwal, A.K. ; Rowland, L.B. ; Valek, W.F.
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While the advantages of SiC power MOSFETs (both UMOS and DMOS type structures) are known, processing issues have prevented these devices from reaching commercial systems. We evaluate the 4H-SiC DMOS (DIMOS) structure and the 4H-SiC UMOS structure using experimental results. We have achieved 1.1 kV SiC UMOS devices and 900 V SiC DMOS devices, which represent the highest reported blocking voltages for both devices to date.

Published in:

Device Research Conference Digest, 1997. 5th

Date of Conference:

23-25 June 1997