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Floating-Body Diode—A Novel DRAM Device

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3 Author(s)
Uygar E. Avci ; Components Research, Technology and Manufacturing Group, Intel Corporation, Hillsboro, OR, USA ; David L. Kencke ; Peter L. D. Chang

A novel 8F2 DRAM cell is introduced, consisting of two gates controlling a low-doped silicon-on-insulator channel and opposite-polarity source and drain. Simulation with models calibrated to experimental floating-body cell data confirms virtual thyristor memory operation and demonstrates 85°C retention time in excess of 10 ms in a scaled FinFET architecture. With unit cell area comparable to that of conventional DRAM, 1.6-V total operation range, 1-ns program time, and CMOS-compatible process, floating-body diode is a candidate for stand-alone or embedded memory applications at 15-nm node and beyond.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 2 )