Terahertz injection locked oscillation in plasmon-resonant transistors

We experimentally and analytically investigated the possibility of injection locked oscillation in a plasmon-resonant dual-grating-gate high-electron mobility transistor to the difference terahertz frequency component of photomixed dual CW laser irradiation. Although the perfect injection locking has not yet been obtained the device model we newly formulate will lead to find practical solutions of successful operation.