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The films studied were grown at the temperature Td= 160°C and doped by boron (B) and phosphorus (P) by incorporation of diborane (B2H6) and phosphine (PH3), respectively, in gas mixture used for the deposition. For B-doped films changing boron concentration in gas phase CBgas from 0.04% to 0.06%, resulted in changing electrical characteristics: conductivity activation energy Eα and room-temperature conductivity σRT from Ea=0.32 to 0.52 eV and σRT=10-4 to 10-7 Ω-1 cm-1, respectively, suggesting compensation of electronic conductivity of the films. Further increasing CBgas from 0.06% to 0.14% caused a reduction of Eα from 0.52 to 0.31 eV and increasing of σRT from 10-7 to 10-4 Ω-1 cm-1. Similar behavior of electrical properties with boron incorporation has been reported in the B-doped Ge.H films deposited at Td=300°C in . The P doped films show continuous change in activation energy ranging from Ea=0.32 to 0.18 eV and room temperature conductivity ranging from σRT=2.3 × 10-4 to 1.8 × 10-2 Ω-1 cm-1 with P incorporation. Thus effective Band P-doping of Ge-Si films deposited at Td=160°C has been demonstrated.
Date of Conference: 26-28 Oct. 2011