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Electromechanical Diode Cell for Cross-Point Nonvolatile Memory Arrays

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4 Author(s)
Wookhyun Kwon ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; Jaeseok Jeon ; Hutin, L. ; Tsu-Jae King Liu

An electromechanical diode nonvolatile memory cell design is proposed for implementation of compact (4F2) cross-point memory arrays. The first prototype cells are demonstrated to operate with relatively low set/reset voltages and excellent retention characteristics and are multi-time programmable (with endurance exceeding 104 set/reset cycles).

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )

Date of Publication:

Feb. 2012

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