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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:33 Issue:2 Help

Electromechanical Diode Cell for Cross-Point Nonvolatile Memory Arrays

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4 Author(s)
Wookhyun Kwon ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; Jaeseok Jeon ; Hutin, L. ; Tsu-Jae King Liu

An electromechanical diode nonvolatile memory cell design is proposed for implementation of compact (4F2) cross-point memory arrays. The first prototype cells are demonstrated to operate with relatively low set/reset voltages and excellent retention characteristics and are multi-time programmable (with endurance exceeding 104 set/reset cycles).

Published in:
Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )

Date of Publication: Feb. 2012

Page(s):
131 - 133
ISSN :
0741-3106
INSPEC Accession Number:
12489186
Digital Object Identifier :
10.1109/LED.2011.2174191
Product Type:
Journals & Magazines
Date of Publication :
08 December 2011
Date of Current Version :
26 January 2012
Issue Date :
Feb. 2012
Sponsored by :
IEEE Electron Devices Society

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