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MOS Devices With High-κ (ZrO _2 ) _x (La _2 O _3 ) _{1-x} Alloy as Gate Dielectric Formed by Depositing ZrO _2 /La _2 O _3 /ZrO _2 Laminate and Annealing

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6 Author(s)
Yung-Hsien Wu ; Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan ; Lun-Lun Chen ; Rong-Jhe Lyu ; Jia-Rong Wu
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An amorphous (ZrO2)x(La2O3)1-x alloy formed by depositing a ZrO2/La2O3/ZrO2 laminate and a subsequent annealing was employed as the gate dielectric for metal-oxide-semiconductor (MOS) devices. The (ZrO2)x(La2O3)1-x alloy is found to have a high permittivity κ of 26.2 with negligible amount of bulk traps, both of which are very desirable for advanced gate dielectrics. By integrating the (ZrO2)x(La 2O3)1-x alloy with an SiON interfacial layer as the gate stack, it displays good frequency dispersion in capacitance-voltage (C -V) characteristics and low interfacial trap density of 1.52 × 1011 cm-2 eV-1. In addition, the current conduction mechanism of the gate stack is observed to be Fowler-Nordheim tunneling and the leakage current of 3.6 × 10-6 A/cm2 at the gate voltage of -1 V for equivalent oxide thickness of 1.1 nm can be achieved, which is superior to other high-κ dielectrics. Furthermore, satisfactory reliability is verified by bias temperature instability measurement. Most importantly, this gate stack not only exhibits a promising perspective for advanced CMOS technology but introduces a more reliable process to form an alloy-based high-κ gate dielectric.

Published in:

IEEE Transactions on Nanotechnology  (Volume:11 ,  Issue: 3 )