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Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation

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3 Author(s)
Lattanzio, L. ; Nanoelectronic Devices Lab. (Nanolab), Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland ; De Michielis, L. ; Ionescu, A.M.

In this letter, we present a novel device, the germanium electron-hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The proposed architecture provides a quasi-ideal alignment between the tunneling path and the electric field controlled by the gate. The device principle and performances are studied by 2-D numerical simulations. This device allows interesting features in terms of low operating voltage (<; 0.5 V), due to its super-steep subthreshold slope (SSAVG ~ 13 mV/dec over six decades of current), ION/IOFF ratio of ~ 109, and drive current of ION ~ 10 μA/μm at VDD = 0.5 V. The same structure with symmetric voltages can be used to achieve a p-type device with ION and IOFF levels comparable to the n-type, which enables a straightforward implementation of complementary logic that could theoretically reach a maximum operating frequency of 1.39 GHz when VDD = 0.25 V.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 2 )

Date of Publication:

Feb. 2012

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