Referenced Items are not available for this document.
We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al2O3 gates were deposited by atomic layer deposition. Reverse-bias breakdown voltages exceeded the largest gate voltage tested (-35 V). The nanowire MOSFETs showed complete pinchoff, with threshold voltages between -4 and -12 V. Maximum transconductances exceeded 10 μS, and ON/OFF current ratios higher than 10 8 were measured. Significant gating hysteresis and memory effects were also present, indicative of charge traps. Although further optimization is needed, these results represent a promising step forward in the development of efficient GaN nanowire-based FETs.
Published in:
Nanotechnology, IEEE Transactions on
(Volume:11
,
Issue:
3
)
Date of Publication: May 2012
- Page(s):
- 479 - 482
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 12711813
- Digital Object Identifier :
- 10.1109/TNANO.2011.2177993
- Product Type:
- Journals & Magazines
- Date of Publication :
- 02 December 2011
- Date of Current Version :
- 04 May 2012
- Issue Date :
- May 2012
- Sponsored by :
- IEEE Nanotechnology Council
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