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CMOS direct time interval measurement of long-lived luminescence lifetimes

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5 Author(s)
Lei Yao ; Department of Electrical and computer engineering, McGill University, Montreal, QC H3A2A7 Canada ; Ka Yi Yung ; Maurice C. Cheung ; Vamsy P. Chodavarapu
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We describe a Complementary Metal-Oxide Semiconductor (CMOS) Direct Time Interval Measurement (DTIM) Integrated Circuit (IC) to detect the decay (fall) time of the luminescence emission when analyte-sensitive luminophores are excited with an optical pulse. The CMOS DTIM IC includes 14×14 phototransistor array, transimpedance amplifier, regulated gain amplifier, fall time detector, and time-to-digital convertor. We examined the DTIM system to measure the emission lifetime of oxygen-sensitive luminophores tris(4,7-diphenyl-1, 10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated in sol-gel derived xerogel thin-films. The DTIM system fabricated using TSMC 0.35μm process functions to detect lifetimes from 4μs to 14.4μs but can be tuned to detect longer lifetimes. The system provides 8-bit digital output proportional to lifetimes and consumes 4.5mW of power with 3.3V DC supply. The CMOS system provides a useful platform for the development of reliable, robust, and miniaturized optical chemical sensors.

Published in:

2011 Annual International Conference of the IEEE Engineering in Medicine and Biology Society

Date of Conference:

Aug. 30 2011-Sept. 3 2011