Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

We report GaInAsSb-based
p
-
i
-
n
photodiodes operating in the 2-2.4-μm wavelength range grown on GaAs (100) substrates using the interfacial misfit (IMF) array technique. A zero-bias dynamic-resistance-area product of 260 Ωcm
²
and a room temperature peak responsivity of 0.8 A/W (at 2 μm) with an estimated maximum detectivity (D*) of ~3.8×10
¹⁰
cm Hz
^1/2
W
^-1
is obtained in the photodiodes at -0.2 V. These preliminary results of the IMF-based GaInAsSb detectors are comparable to similar detectors grown on native GaSb substrates demonstrating the potential of the IMF array growth mode to realize high-quality Sb-based infrared detectors on GaAs substrates.