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Dispersive to non-dispersive transition in the drift mobility of F8BT based-thin-film devices

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4 Author(s)
Faria, G.C. ; Inst. de Fis. de Sao Carlos, Univ. de Sao Paulo, São Carlos, Brazil ; Faria, R.M. ; deAzevedo, E.R. ; von Seggern, H.

Here we present a study of the temperature dependence of charge transport in spin-coated F8BT thin films. We have utilized the "Photo-Carrier Extraction by Linearly Increasing Voltage" (Photo-CELIV) technique3 which is able to measure charge carrier mobilities in F8BT thin film devices. To analyze the results we made use of the Gaussian Disorder Model (GDM),4 in which the electronic conduction is assumed to occur via thermally activated hopping through a Gaussian Density of States (DOS).

Published in:

Electrets (ISE), 2011 14th International Symposium on

Date of Conference:

28-31 Aug. 2011