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Here we present a study of the temperature dependence of charge transport in spin-coated F8BT thin films. We have utilized the "Photo-Carrier Extraction by Linearly Increasing Voltage" (Photo-CELIV) technique3 which is able to measure charge carrier mobilities in F8BT thin film devices. To analyze the results we made use of the Gaussian Disorder Model (GDM),4 in which the electronic conduction is assumed to occur via thermally activated hopping through a Gaussian Density of States (DOS).
Electrets (ISE), 2011 14th International Symposium on
Date of Conference: 28-31 Aug. 2011