Referenced Items are not available for this document.
In this paper, two new zero-sleep-leakage flip-flop (F-F) circuits are proposed to make the sleep leakage literally zero. At the sleep-in time, the F-F's data are transferred to memristor retention latch; thus, the F-F can be completely cutoff from the external power supply saving the energy leak during the sleep time. The conditional storing circuit in the F-F (type-2) can reduce switching power by 87% in storing the data than the F-F (type-1). And, the crossover time of the F-F (type-2) is shortened by 97% than the F-F (type-1).
Published in:
Nanotechnology, IEEE Transactions on
(Volume:11
,
Issue:
2
)
Date of Publication: March 2012
- Page(s):
- 360 - 366
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 12578107
- Digital Object Identifier :
- 10.1109/TNANO.2011.2175943
- Product Type:
- Journals & Magazines
- Date of Publication :
- 16 November 2011
- Date of Current Version :
- 09 March 2012
- Issue Date :
- March 2012
- Sponsored by :
- IEEE Nanotechnology Council
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