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This investigation proposes an Ir(ppy)3/Ir(mpp)3 double-emitter heterojuction metal-base transistors grown by vacuum sublimation deposition. The improved structure exhibits the advantages of high ON-to-OFF current ratio 4.98 × 106 and high current gains (β) 355.6. The device survived for almost two months with a slight dropped in these parameters before it is completely gone in four months. Furthermore, this study elucidates the relation between leakage current, current gains, and ON-to-OFF current ratio.