An analog behavioral thermal macro-model aimed at representing an elementary portion of a discrete IGBT power device

Cutting-edge applications in the power management market impose new modeling strategies able to guarantee reliable results in terms of electrical characteristics and thermal behavior matching. The introductory part of this work will be focused on an overview of state-of-art general compact modeling methods for IGBT power devices and their intrinsic limits. A new distributed macro modeling strategy, whose strong point is its area-scaled approach, aimed at overcoming compact modeling limits will be explained Then, the implementation flow of a macro model representing an elementary portion of silicon active area and its components will be described. Simulation results on an STMicroelectronics IGBT test devices will close the paper.